Beijing Silk Road Enterprise Management Services Co.,LTD

Beijing Silk Road Enterprise Management Services Co.,LTD

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FDC8886

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FDC8886

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Category :Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature :-
Vgs(th) (Max) @ Id :3V @ 250µA
Operating Temperature :-55°C ~ 150°C (TJ)
Package / Case :SOT-23-6 Thin, TSOT-23-6
Gate Charge (Qg) (Max) @ Vgs :7.4 nC @ 10 V
Rds On (Max) @ Id, Vgs :23mOhm @ 6.5A, 10V
FET Type :N-Channel
Drive Voltage (Max Rds On, Min Rds On) :4.5V, 10V
Package :Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss) :30 V
Vgs (Max) :±20V
Product Status :Active
Input Capacitance (Ciss) (Max) @ Vds :465 pF @ 15 V
Mounting Type :Surface Mount
Series :PowerTrench®
Supplier Device Package :SuperSOT™-6
Mfr :onsemi
Current - Continuous Drain (Id) @ 25°C :6.5A (Ta), 8A (Tc)
Power Dissipation (Max) :1.6W (Ta)
Technology :MOSFET (Metal Oxide)
Base Product Number :FDC8886
Description :MOSFET N-CH 30V 6.5/8A SUPERSOT6
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N-Channel 30 V 6.5A (Ta), 8A (Tc) 1.6W (Ta) Surface Mount SuperSOT™-6
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