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Category :Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature :-
Vgs(th) (Max) @ Id :4V @ 1mA
Operating Temperature :-55°C ~ 150°C (TJ)
Package / Case :TO-261-4, TO-261AA
Gate Charge (Qg) (Max) @ Vgs :33 nC @ 10 V
Rds On (Max) @ Id, Vgs :130mOhm @ 2.9A, 10V
FET Type :P-Channel
Drive Voltage (Max Rds On, Min Rds On) :10V
Package :Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain to Source Voltage (Vdss) :60 V
Vgs (Max) :±20V
Product Status :Active
Input Capacitance (Ciss) (Max) @ Vds :875 pF @ 25 V
Mounting Type :Surface Mount
Series :SIPMOS®
Supplier Device Package :PG-SOT223-4
Mfr :Infineon Technologies
Current - Continuous Drain (Id) @ 25°C :2.9A (Ta)
Power Dissipation (Max) :1.8W (Ta)
Technology :MOSFET (Metal Oxide)
Base Product Number :BSP613
Description :MOSFET P-CH 60V 2.9A SOT223-4
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